NANOPURE 产品的应用指南

Contents 工序 Seal 温度 DuPont™
Kalrez®
GreeneTweed™
Chemraz®
MNE™
NANOPURE®
特点
 Plasma
Processes
HDP-CVD /
PE-CVD
25~200℃ 9100
8085
XRZ
657
HX-6
XUP
HP9600
HX-6
Excellent performance in high temperature processes. No problems caused by particles.
XUP
Used high temperature plasma and gas deposition processes. HP9600 – Excellent performance in dynamic seal. No problems caused by particles.
9080A
Excellent plasma resistance          and extended dynamic seal life time.
HX-5
Suggested product for metal CVD, ALD, LPCVD, oxidation and diffusion processes.
875HT
For high temperature plasma processes.
I800W /  9080A
Suggested product for lamp anneal and RTP processes. General purpose product for all wet process applications.
Etching 25~200℃
Ashing / Stripping 25~250℃ 9100
8085
XRZ
657
HP9600
XUP
9080A
Thermal
Processes
SA-CVD 25~250℃ 8085 E38 I800W
HP9600
Metal-CVD
ALD, LP-CVD
25~300℃ 8900
9100
657 HX-5
HX-6
Oxidation,
Diffusion
150~300℃ 8900
8475
657 HX-5
875HT
Lamp Anneal,
RTP
150~300℃ 8475 E38 I800W
Wet
Processes
Wafer Prep, 25~125℃ 6375
4079
I800W
9080A
Etching 25~180℃
Photolithography 25~125℃
Stripping 25~125℃ 6375
Copper Plating 25~100℃


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